FDS8812NZ Ver la hoja de datos (PDF) - Fairchild Semiconductor
Número de pieza
componentes Descripción
Fabricante
FDS8812NZ Datasheet PDF : 6 Pages
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Typical Characteristics TJ = 25°C unless otherwise noted
10
ID = 20A
8
6
4
VDD = 10V
VDD = 15V
VDD =20V
10000
1000
Ciss
Coss
Crss
2
0
0
20
40
60
80
100
Qg, GATE CHARGE(nC)
Figure 7. Gate Charge Characteristics
f = 1MHz
VGS = 0V
100
0.1
1
10
30
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Capacitance vs Drain
to Source Voltage
50
10
TJ = 25oC
TJ = 125oC
1
0.01
0.1
1
10
100
tAV, TIME IN AVALANCHE(ms)
1000
Figure 9. Unclamped Inductive
Switching Capability
10-3
VGS = 0V
10-4
10-5
TJ = 150oC
10-6
10-7
TJ = 25oC
10-8
10-9
0
5
10
15
20
25
30
VGS, GATE TO SOURCE VOLTAGE(V)
Figure 10. Gate Leakage Current vs Gate to
Source Voltage
24
20
16
VGS = 10V
12
VGS = 4.5V
8
4
RθJA = 50oC/W
0
25
50
75
100
125
150
TA, AMBIENT TEMPERATURE (oC)
Figure 11. Maximum Continuous Drain
Current vs Ambient Temperature
300
rDS(on) LIMITED
100
1ms
10
10ms
1
0.1
0.01
0.01
SINGLE PULSE
TJ = MAX RATED
RθJA = 125oC/W
TA = 25oC
0.1
1
100ms
1s
10s
DC
10
100
VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 12. Forward Bias Safe
Operating Area
FDS8812NZ Rev.C
4
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