FDS6699S Ver la hoja de datos (PDF) - Fairchild Semiconductor
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FDS6699S Datasheet PDF : 6 Pages
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Electrical Characteristics TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
Drain–Source Breakdown Voltage
∆BVDSS
∆TJ
Breakdown Voltage Temperature
Coefï¬cient
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate–Body Leakage
On Characteristics (Note 2)
VGS = 0 V, ID = 1 mA
ID = 1 mA, Referenced to 25°C
VDS = 24 V, VGS = 0 V
VGS = ±20 V, VDS = 0 V
30
28
V
mV/°C
500
µA
±100 nA
VGS(th)
∆VGS(th)
∆TJ
RDS(on)
Gate Threshold Voltage
Gate Threshold Voltage Temperature
Coefï¬cient
Static Drain–Source
On–Resistance
gFS
Forward Transconductance
Dynamic Characteristics
VDS = VGS, ID = 1 mA
ID = 1 mA, Referenced to 25°C
VGS = 10 V, ID = 21 A
VGS = 4.5 V, ID = 19 A
VGS=10 V, ID =21 A, TJ=125°C
VDS = 10 V, ID = 21 A
1
1.4
3
V
–3.2
mV/°C
3.0 3.6
mΩ
3.6 4.5
4.6 5.6
100
S
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
RG
Gate Resistance
Switching Characteristics (Note 2)
VDS = 15 V, VGS = 0 V,
f = 1.0 MHz
VGS = 15 mV, f = 1.0 MHz
3610
pF
1050
pF
340
pF
0.4 1.8 3.1
Ω
td(on)
tr
Turn–On Delay Time
Turn–On Rise Time
VDD = 15 V, ID = 1 A,
VGS = 10 V, RGEN = 6 Ω
td(off)
Turn–Off Delay Time
tf
Turn–Off Fall Time
Qg(TOT) Total Gate Charge at Vgs = 10V
VDD = 15 V, ID = 21 A,
Qg
Total Gate Charge at Vgs = 5V
Qgs
Gate–Source Charge
Qgd
Gate–Drain Charge
Drain–Source Diode Characteristics and Maximum Ratings
11
20
ns
12
22
ns
73 117
ns
38
61
ns
65
91
nC
35
49
nC
9
nC
11
nC
VSD
Drain–Source Diode Forward Voltage
VGS = 0 V, IS = 3.5 A
(Note 2)
trr
Diode Reverse Recovery Time
IF = 21 A,
IRM
Diode Reverse Recovery Current
diF/dt = 300 A/µs
(Note 3)
Qrr
Diode Reverse Recovery Charge
0.36 0.7
V
32
ns
2.2
A
35
nC
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is deï¬ned as the solder mounting surface of the drain pins.
RθJC is guaranteed by design while RθCA is determined by the user's board design.
a) 50°/W when mounted
on a 1 in2 pad of 2 oz
copper
b) 105°/W when mounted
on a .04 in2 pad of 2 oz
copper
c) 125°/W when mounted
on a minimum pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
3. See “SyncFET Schottky body diode characteristics†below.
2
FDS6699S Rev. D
www.fairchildsemi.com
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