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FDR6678A

30V N-Channel PowerTrench® MOSFET

Fairchild Semiconductor 

April 2000

PRELIMINARY

FDR6678A

30V N-Channel PowerTrench MOSFET

General Description

This N-Channel MOSFET has been designed

specifically to improve the overall efficiency of DC/DC

converters using either synchronous or conventional

switching PWM controllers. It has been optimized for

“high side” synchronous rectifier operation, providing an

extremely low RDS(ON) and fast switching in a small

package.

Applications

• DC/DC converter

Features

• 7.5 A, 30 V.

RDS(ON) = 24 mΩ @ VGS = 4.5V

RDS(ON) = 20 mΩ @ VGS = 10 V

• High performance trench technology for extremely

low RDS(ON)

• Fast switching, low gate charge

• High power and current in a smaller footprint than

SO-8

S

D

D

S

G

D

SuperSOTTM -8

D

D

5

4

6

3

7

2

8

1

Absolute Maximum Ratings TA=25oC unless otherwise noted

Symbol

Parameter

VDSS

VGSS

ID

Drain-Source Voltage

Gate-Source Voltage

Drain Current – Continuous

(Note 1a)

– Pulsed

PD

Power Dissipation for Single Operation

(Note 1a)

(Note 1b)

TJ, TSTG

(Note 1c)

Operating and Storage Junction Temperature Range

Thermal Characteristics

RθJA

Thermal Resistance, Junction-to-Ambient

RθJC

Thermal Resistance, Junction-to-Case

(Note 1a)

(Note 1)

Package Marking and Ordering Information

Device Marking

Device

Reel Size

.6678A

FDR6678A

13’’

Ratings

30

±12

7.5

40

1.8

1.0

0.9

-55 to +150

70

20

Tape width

12mm

Units

V

V

A

W

°C

°C/W

°C/W

Quantity

2500 units

2000 Fairchild Semiconductor Corporation

FDR6678A Rev B(W)

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