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FDP150N10A_F102 Datasheet PDF : 9 Pages
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Package Marking and Ordering Information
Part Number
FDP150N10A_F102
Top Mark
FDP150N10A
Package
TO-220
Packing Method
Tube
Reel Size
N/A
Tape Width
N/A
Electrical Characteristics TC = 25oC unless otherwise noted.
Symbol
Parameter
Test Conditions
Off Characteristics
BVDSS
ΔBVDSS
/ ΔTJ
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate to Body Leakage Current
ID = 250 μA, VGS = 0 V
ID = 250 μA, Referenced to 25oC
VDS = 80 V, VGS = 0 V
VDS = 80 V, TC = 150oC
VGS = ±20 V, VDS = 0 V
On Characteristics
VGS(th)
RDS(on)
gFS
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
VGS = VDS, ID = 250 μA
VGS = 10 V, ID = 50 A
VDS = 10 V, ID = 50 A
Dynamic Characteristics
Ciss
Coss
Crss
Coss(er)
Qg(tot)
Qgs
Qgs2
Qgd
ESR
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Engry Related Output Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate Charge Threshold to Plateau
Gate to Drain “Miller” Charge
Equivalent Series Resistance (G-S)
VDS = 50 V, VGS = 0 V,
f = 1 MHz
VDS = 50 V, VGS = 0 V
VDS = 50 V , VGS = 10 V,
ID = 50 A
f = 1 MHz
(Note 4)
Min.
100
-
-
-
-
2.0
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
0.08
-
-
-
-
12.5
40
1080
267
11
436
16.2
5.3
2.6
3.7
1.3
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
VDD = 50 V, ID = 50 A,
VGS = 10 V, RG = 4.7 Ω
-
13
-
16
-
21
(Note 4)
-
5
Drain-Source Diode Characteristics
IS
Maximum Continuous Drain to Source Diode Forward Current
-
-
ISM
Maximum Pulsed Drain to Source Diode Forward Current
-
-
VSD
Drain to Source Diode Forward Voltage
VGS = 0 V, ISD = 50 A
-
-
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0 V, VDD = 50 V, ISD = 50 A,
-
50
dIF/dt = 100 A/μs
-
55
Notes:
1. Repetitive rating: pulse-width limited by maximum junction temperature.
2. L = 2 mH, IAS = 9.2 A, RG = 25 Ω, starting TJ = 25°C.
3. ISD ≤ 100 A, di/dt ≤ 200 A/μs, VDD ≤ BVDSS, starting TJ = 25°C.
4. Essentially independent of operating temperature typical characteristics.
Quantity
50 units
Max. Unit
-
-
1
500
±100
V
V/oC
μA
nA
4.0
V
15.0 mΩ
-
S
1440 pF
355
pF
-
pF
-
pF
21.0 nC
-
nC
-
nC
-
nC
-
Ω
36
ns
42
ns
52
ns
20
ns
50
A
200
A
1.3
V
-
ns
-
nC
©2011 Fairchild Semiconductor Corporation
2
FDP150N10A Rev. C1
www.fairchildsemi.com
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