FDB6030BL Ver la hoja de datos (PDF) - Fairchild Semiconductor
Número de pieza
componentes Descripción
Fabricante
FDB6030BL Datasheet PDF : 10 Pages
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Typical Characteristics (continued)
10
ID = 20A
8
6
4
2
0
0
5
VDS = 5V
10V
15V
10
15
20
25
Qg, GATE CHARGE (nC)
Figure 7. Gate-Charge Characteristics.
1000
100
VGS = 10V
SINGLE PULSE
RθJC = 2.5oC/W
TC = 25oC
RDS(ON) LIMIT
10
10µs
100µs
1ms
10ms
100ms
DC
1
0.1
1
10
100
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area.
1600
1400
1200
1000
800
600
400
200
0
0
CISS
f = 1 MHz
VGS = 0 V
COSS
CRSS
5
10
15
20
25
30
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Capacitance Characteristics.
2500
2000
1500
1000
500
0
0.01
SINGLE PULSE
RθJC =2.5°C/W
TC = 25°C
0.1
1
10
100
SINGLE PULSE TIME (mSEC)
1,000
Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
0.5
0.3
0.2
0.2
0.1
0.1
0.05
0.05 0.02
0.03 0.01
0.02
Single Pulse
0.01
0.01
0.1
1
10
t1 ,TIME (ms)
R θJC (t) = r(t) * RθJC
RθJC = 2.5 °C/W
P(pk)
t1
t2
TJ - TC = P * RθJC (t)
Duty Cycle, D = t1 /t2
100
1000
Figure 11. Transient Thermal Response Curve.
FDP6030BL/FDB6030BL Rev.C
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