FDD3N40 Ver la hoja de datos (PDF) - Fairchild Semiconductor
Número de pieza
componentes Descripción
Fabricante
FDD3N40 Datasheet PDF : 9 Pages
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Typical Performance Characteristics
Figure 1. On-Region Characteristics
101
Top :
VGS
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
100
6.0 V
Bottom : 5.5 V
10-1
10-2
10-1
* Notes :
1. 250µs Pulse Test
2. T = 25oC
C
100
101
VDS, Drain-Source Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
15
14
13
12
11
10
9
8
7
VGS = 10V
6
5
4
VGS = 20V
3
2
1
* Note : TJ = 25oC
0
1
2
3
4
5
6
ID, Drain Current [A]
Figure 5. Capacitance Characteristics
350
300
250
200
150
100
50
0
10-1
Coss
Ciss
Ciss = Cgs + Cgd (Cds = shorted)
C =C +C
oss
ds
gd
Crss = Cgd
* Note :
1. V = 0 V
Crss
GS
2. f = 1 MHz
100
101
VDS, Drain-Source Voltage [V]
Figure 2. Transfer Characteristics
101
150oC
25oC
-55oC
100
4
* Notes :
1. VDS = 40V
2. 250µs Pulse Test
5
6
7
8
9
10
VGS, Gate-Source Voltage [V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperatue
101
100
10-1
0.2
150oC
25oC
* Notes :
1. VGS = 0V
2. 250µs Pulse Test
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
VSD, Source-Drain voltage [V]
Figure 6. Gate Charge Characteristics
12
10
V = 80V
DS
VDS = 200V
8
VDS = 320V
6
4
2
* Note : ID = 3A
0
0
1
2
3
4
5
QG, Total Gate Charge [nC]
3
FDD3N40 / FDU3N40 Rev. A
www.fairchildsemi.com
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