FDD6676AS Ver la hoja de datos (PDF) - Fairchild Semiconductor
Número de pieza
componentes Descripción
Fabricante
FDD6676AS Datasheet PDF : 8 Pages
| |||
Typical Characteristics (continued)
SyncFET Schottky Body Diode
Characteristics
Fairchild’s SyncFET process embeds a Schottky diode
in parallel with PowerTrench MOSFET. This diode
exhibits similar characteristics to a discrete external
Schottky diode in parallel with a MOSFET. Figure 12
shows the reverse recovery characteristic of the
FDD6676AS.
TIME : 12.5ns/div
Figure 12. FDD6676AS SyncFET body diode
reverse recovery characteristic.
For comparison purposes, Figure 13 shows the reverse
recovery characteristics of the body diode of an
equivalent size MOSFET produced without SyncFET
(FDD6676A).
Schottky barrier diodes exhibit significant leakage at
high temperature and high reverse voltage. This will
increase the power in the device.
0.1
0.01
TA = 125oC
0.001
TA = 100oC
0.0001
0.00001
0
TA = 25oC
5
10
15
20
25
30
VDS, REVERSE VOLTAGE (V)
Figure 14. SyncFET body diode reverse
leakage versus drain-source voltage and
temperature.
TIME : 12.5ns/div
Figure 13. Non-SyncFET (FDD6676A) body
diode reverse recovery characteristic.
FDD6676AS Rev A(X)
Share Link: 