FDD6670 Ver la hoja de datos (PDF) - Fairchild Semiconductor
Número de pieza
componentes Descripción
Fabricante
FDD6670 Datasheet PDF : 6 Pages
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Typical Characteristics
100
VGS=10V
4.0V
80
6.0V
4.5V
60
3.5V
40
20
3.0V
0
0
0.5
1
1.5
2
2.5
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics
3
2.8 VGS = 3.0V
2.6
2.4
2.2
2
1.8
1.6
3.5V
1.4
4.0V
4.5V
1.2
6.0V
1
10V
0.8
0
20
40
60
80
100
ID, DRAIN CURRENT (A)
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage
1.6
ID = 66A
VGS = 10V
1.4
1.2
1
0.8
0.6
-50 -25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
Figure 3. On-Resistance Variation
withTemperature
0.02
0.0175
ID = 33A
0.015
0.0125
TA = 125oC
0.01
0.0075
TA = 25oC
0.005
2
4
6
8
10
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage
90
VDS = 5V
80
70
60
50
40
TA =125oC
30
-55oC
20
10
0
1.5
25oC
2
2.5
3
3.5
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
1000
100
VGS = 0V
10
1
0.1
0.01
TA = 125oC
25o
C
-55 oC
0.001
0.0001
4
0
0.2
0.4
0.6
0.8
1
1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature
FDD6670A Rev. E1(W)
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