FDD6670 Ver la hoja de datos (PDF) - Fairchild Semiconductor
Número de pieza
componentes Descripción
Fabricante
FDD6670 Datasheet PDF : 6 Pages
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Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Drain-Source Avalanche Ratings (Note 2)
EAS
Drain-Source Avalanche Energy Single Pulse, VDD = 15 V, ID= 66 A
IAS
Drain-Source Avalanche Current
Off Characteristics
BVDSS
∆BVDSS
∆TJ
IDSS
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
IGSS
Gate–Body Leakage
VGS = 0 V, ID = 250 µA
ID = 250 µA,Referenced to 25°C
VDS = 24 V, VGS = 0 V
VGS = ±20 V, VDS = 0 V
On Characteristics (Note 2)
VGS(th)
Gate Threshold Voltage
∆VGS(th)
∆TJ
RDS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
ID(on)
On–State Drain Current
gFS
Forward Transconductance
VDS = VGS, ID = 250 µA
ID = 250 µA,Referenced to 25°C
VGS = 10 V, ID = 15 A
VGS = 4.5 V, ID = 13 A
VGS = 10 V, ID = 15 A,TJ=125°C
VGS = 10 V, VDS = 5 V
VDS = 10 V, ID = 15 A
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
RG
Gate Resistance
VDS = 15 V, V GS = 0 V,
f = 1.0 MHz
VGS = 15 mV, f = 1.0 MHz
Switching Characteristics
td(on)
Turn–On Delay Time
tr
Turn–On Rise Time
td(off)
Turn–Off Delay Time
tf
Turn–Off Fall Time
Qg
Total Gate Charge
Qg s
Gate–Source Charge
Qgd
Gate–Drain Charge
(Note 2)
VDD = 15 V,
VGS = 10 V,
ID = 1 A,
RGEN = 6 Ω
VDS = 15V,
VGS = 5 V
ID = 15 A,
Min Typ Max Units
67
mJ
66
A
30
26
V
mV/°C
1
µA
±100 nA
1 1.8 3
V
–5
mV/°C
6.3 8
mΩ
7.9 10
9.5 13
50
A
60
S
1755
pF
430
pF
180
pF
1.3
Ω
11 20
ns
12 21
ns
29 47
ns
19 34
ns
16 22
nC
4.6
nC
6.2
nC
FDD6670A Rev. E1(W)
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