FDC6420C Ver la hoja de datos (PDF) - Fairchild Semiconductor

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FDC6420C

20V N & P-Channel PowerTrench® MOSFETs

Fairchild Semiconductor 

Typical Characteristics: P-Channel

6

VGS =- 4.5V

5

-3.5V

-3.0V

-2.5V

4

3

-2.0V

2

-1.8V

1

0

0

0.5

1

1.5

2

2.5

-VDS, DRAIN-SOURCE VOLTAGE (V)

2.75

2.5

2.25

VGS = -2.0V

2

1.75

-2.5V

1.5

-3.0V

1.25

-3.5V

1

-4.5V

0.75

0

1

2

3

4

5

6

-ID, DRAIN CURRENT (A)

Figure 11. On-Region Characteristics.

Figure 12. On-Resistance Variation with

Drain Current and Gate Voltage.

1.6

ID = -2.2A

VGS = -4.5V

1.4

1.2

1

0.8

0.6

-50 -25

0

25

50

75 100 125 150

TJ, JUNCTION TEMPERATURE (oC)

Figure 13. On-Resistance Variation with

Temperature.

0.4

0.35

0.3

0.25

0.2

0.15

0.1

0.05

1

ID = -1.1 A

TA = 125oC

TA = 25oC

2

3

4

5

-VGS, GATE TO SOURCE VOLTAGE (V)

Figure 14. On-Resistance Variation with

Gate-to-Source Voltage.

5

VDS = -5V

4

3

TA = -55oC

25oC

125oC

2

1

0

0.5

1

1.5

2

2.5

3

-VGS, GATE TO SOURCE VOLTAGE (V)

10

VGS = 0V

1

0.1

TA = 125oC

0.01

0.001

25oC

-55oC

0.0001

0

0.2

0.4

0.6

0.8

1

1.2

-VSD, BODY DIODE FORWARD VOLTAGE (V)

Figure 15. Transfer Characteristics.

Figure 16. Body Diode Forward Voltage Variation

with Source Current and Temperature.

FDC6420C Rev C(W)

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