FDB024N06 Ver la hoja de datos (PDF) - Fairchild Semiconductor
Número de pieza
componentes Descripción
Fabricante
FDB024N06 Datasheet PDF : 8 Pages
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Typical Performance Characteristics
Figure 1. On-Region Characteristics
700
VGS = 15.0 V
10.0 V
8.0 V
7.0 V
100
6.5 V
6.0 V
5.5 V
5.0 V
10
1
0.01
*Notes:
1. 250µs Pulse Test
2. TC = 25oC
0.1
1
VDS,Drain-Source Voltage[V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
3.0
2.5
VGS = 10V
2.0
1.5
1.0
0
VGS = 20V
*Note: TC = 25oC
100
200
300
400
ID, Drain Current [A]
Figure 5. Capacitance Characteristics
16000
Ciss
12000
*Note:
1. VGS = 0V
2. f = 1MHz
8000
Coss
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
4000
Crss
0
0.1
1
10
60
VDS, Drain-Source Voltage [V]
Figure 2. Transfer Characteristics
1000
*Notes:
1. VDS = 20V
2. 250µs Pulse Test
100
175oC
25oC
10
-55oC
1
2
3
4
5
6
7
VGS,Gate-Source Voltage[V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
500
175oC
100
25oC
10
*Notes:
1. VGS = 0V
2. 250µs Pulse Test
1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
VSD, Body Diode Forward Voltage [V]
Figure 6. Gate Charge Characteristics
10
VDS = 15V
8
VDS = 30V
VDS = 48V
6
4
2
*Note: ID = 75A
0
0
40
80
120
160
200
Qg, Total Gate Charge [nC]
FDB024N06 Rev. A3
3
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