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M29F040B(2005) Ver la hoja de datos (PDF) - STMicroelectronics

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M29F040B Datasheet PDF : 20 Pages
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M29F040B
4 Mbit (512Kb x8, Uniform Block) Single Supply Flash Memory
SINGLE 5V ± 10% SUPPLY VOLTAGE for
PROGRAM, ERASE and READ OPERATIONS
ACCESS TIME: 45ns
PROGRAMMING TIME
– 8 µs per Byte typical
8 UNIFORM 64 Kbytes MEMORY BLOCKS
PROGRAM/ERASE CONTROLLER
– Embedded Byte Program algorithm
– Embedded Multi-Block/Chip Erase algorithm
– Status Register Polling and Toggle Bits
ERASE SUSPEND and RESUME MODES
– Read and Program another Block during
Erase Suspend
UNLOCK BYPASS PROGRAM COMMAND
– Faster Production/Batch Programming
LOW POWER CONSUMPTION
– Standby and Automatic Standby
100,000 PROGRAM/ERASE CYCLES per
BLOCK
20 YEARS DATA RETENTION
– Defectivity below 1 ppm/year
ELECTRONIC SIGNATURE
– Manufacturer Code: 20h
– Device Code: E2h
ECOPACK® PACKAGES AVAILABLE
PLCC32 (K)
TSOP32 (N)
8 x 20mm
September 2005
1/20

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