ESDALC6V1-5P6 Ver la hoja de datos (PDF) - STMicroelectronics
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ESDALC6V1-5P6 Datasheet PDF : 8 Pages
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ESDALC6V1-5P6
Characteristics
Figure 2.
Relative variation of peak pulse
power versus initial junction
temperature
PPP[Tj initial] / PPP[Tj initial=25°C)
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
Tj(°C)
0.0
0
25
50
75
100
125
150
Figure 3.
Peak pulse power versus
exponential pulse duration
(Tj initial = 25 °C)
PPP(W)
1000
Tj initial = 25°C
100
tp(µs)
10
1
10
100
Figure 4. Clamping voltage versus peak
pulse current (typical values)
IPP(A)
10.0
8/20 µs
Tj initial = 25°C
Figure 5.
Relative variation of leakage
current versus junction
temperature (typical values)
IR[Tj] / IR[Tj=25°C]
1000
VR=3V
100
1.0
10
VCL(V)
0.1
5
6
7
8
9
10 11 12 13 14 15
Tj(°C)
1
25
50
75
100
125
150
Figure 6.
VBR
8.0
1 mA
7.0
6.0
25
Breakdown voltage versus initial
junction temperature
Tj(°C)
50
75
100
125
Figure 7.
Junction capacitance versus
reverse voltage applied
(typical values)
C(pF)
14
12
10
F=1MHz
VOSC=30mVRMS
Tj=25°C
8
6
4
2
VR(V)
0
0.0
0.4
0.8
1.2
1.6
2.0
2.4
2.8
3/8
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