ESD11A3.3DT5G Ver la hoja de datos (PDF) - ON Semiconductor
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ESD11A3.3DT5G Datasheet PDF : 5 Pages
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ESD11A3.3DT5G SERIES
Table 2. ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Symbol
Parameter
IPP
VC
VRWM
IR
VBR
IT
IF
VF
Ppk
C
Maximum Reverse Peak Pulse Current
Clamping Voltage @ IPP
Working Peak Reverse Voltage
Maximum Reverse Leakage Current @ VRWM
Breakdown Voltage @ IT
Test Current
Forward Current
Forward Voltage @ IF
Peak Power Dissipation
Capacitance @VR = 0 and f = 1 MHz
I
IF
VC VBR VRWM
IIRT VF
V
IPP
Uni−Directional
Table 3. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, VF = 0.9 V Max. @ IF = 10 mA for all types)
Device
VBR (V)
C (pF),
VC (V)
VC (V)
VRWM IR (mA)
@ IT
uni−directional @ IPP = 1 A IEC61000−4−2
Device
(V) @ VRWM (Note 2)
IT
(Note 3)
(Note 5)
(Note 6)
Marking Max Max
Min
mA
Typ
Max
Max
Typ
ESD11A3.3DT5G
2*
3.3
1.0
5.2
1.0
25
35
7.8
Figures 1 thru 4
ESD11A5.0DT5G
3*
5.0
0.1
6.2
1.0
20
30
9.5
Figures 1 thru 4
*Rotated 90° clockwise.
2. VBR is measured with a pulse test current IT at an ambient temperature of 25°C.
3. Uni−directional capacitance at f = 1 MHz, VR = 0 V, TA = 25°C (pin1 to pin 3; pin 2 to pin 3).
4. Bi−directional capacitance at f = 1 MHz, VR = 0 V, TA = 25°C (pin1 to pin 2).
5. Surge current waveform per Figure 7.
6. Typical waveform. For test procedure see Figures 5 and 6 and Application Note AND8307/D.
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