ESD11N5.0ST5G(2017) Ver la hoja de datos (PDF) - ON Semiconductor

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ESD11N5.0ST5G
(Rev.:2017)

ESD Protection Diodes Micro−Packaged Diodes for ESD Protection

ON Semiconductor 

ESD11N5.0ST5G

ELECTRICAL CHARACTERISTICS

(TA = 25°C unless otherwise noted)

Symbol

Parameter

IPP

Maximum Reverse Peak Pulse Current

VC

Clamping Voltage @ IPP

VRWM Working Peak Reverse Voltage

IR

Maximum Reverse Leakage Current @ VRWM

VBR

Breakdown Voltage @ IT

IT

Test Current

*See Application Note AND8308/D for detailed explanations of

datasheet parameters.

I

IPP

VC VBR VRWM IIRT

IIRT

VRWM VBR VC V

IPP

Bi−Directional

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

VRWM IR (mA) VBR (V) @ IT

(V) @ VRWM (Note 2)

IT

Device

Device

Marking Max Max

Min

mA

ESD11N5.0ST5G

N5S0

5.0

1.0

5.8

1.0

2. VBR is measured with a pulse test current IT at an ambient temperature of 25°C.

3. Surge current waveforms per Figure 5.

4. For test procedure see Figures 3 and 4 and Application Note AND8307/D.

C (pF)

Typ Max

0.6 0.9

VC (V) @

IPP = 1 A

Max

(Note 3)

12

VC

Per IEC61000−4−2

(Note 4)

Figures 1 and 2

See Below

Figure 1. ESD Clamping Voltage Screenshot

Positive 8 kV Contact per IEC61000−4−2

Figure 2. ESD Clamping Voltage Screenshot

Negative 8 kV Contact per IEC61000−4−2

www.onsemi.com

2

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