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ESD11B

ESD Protection Diode Micro−Packaged Diodes for ESD Protection

ON Semiconductor 

ESD11B

ELECTRICAL CHARACTERISTICS

(TA = 25°C unless otherwise noted)

Symbol

Parameter

IPP

Maximum Reverse Peak Pulse Current

VC

Clamping Voltage @ IPP

VRWM Working Peak Reverse Voltage

IR

Maximum Reverse Leakage Current @ VRWM

VBR

Breakdown Voltage @ IT

IT

Test Current

*See Application Note AND8308/D for detailed explanations of

datasheet parameters.

I

IPP

VC VBR VRWM IIRT

IIRT

VRWM VBR VC V

IPP

Bi−Directional

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

VRWM IR (mA)

VBR (V) @ IT

VC (V) @

(V) @ VRWM

(Note 2)

IT

C (pF)

1A

VC

Device

Device

Marking Max

Max

Max

Per IEC61000−4−2

Min

mA Typ Max (Note 3)

(Note 4)

ESD11B5.0ST5G

11B5

5.0

1.0

5.8

1.0 12 13.5

10

Figures 1 and 2

See Below

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

2. VBR is measured with a pulse test current IT at an ambient temperature of 25°C.

3. Surge current waveforms per Figure 5.

4. For test procedure see Figures 3 and 4 and Application Note AND8307/D.

Figure 1. ESD Clamping Voltage Screenshot

Positive 8 kV Contact per IEC61000−4−2

Figure 2. ESD Clamping Voltage Screenshot

Negative 8 kV Contact per IEC61000−4−2

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