ESAC33M Ver la hoja de datos (PDF) - Fuji Electric
Número de pieza
componentes Descripción
Fabricante
ESAC33M Datasheet PDF : 3 Pages
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ESAC33M(C,N,D) (8A)
(200V / 8A)
FAST RECOVERY DIODE
Outline drawings, mm
10.5 Max.
6.0
Ø3.2+-00..21
4.5Max.
2.0
Features
Insulated package by fully molding
High voltage by mesa design
High reliability
Applications
High speed switching
Maximum ratings and characteristics
Absolute maximum ratings
Item
Symbol
Conditions
Repetitive peak reverse voltage
VRRM
1.2
0.4
JEDEC
EIAJ
0.8
2.54
2.7
5.08
SC-67
Connection diagram
ESAC33M- C
1
2
3
ESAC33M- N
1
2
3
ESAC33M- D 1
2
3
Rating
Unit
-02
200
V
Non-repetitive peak reverse voltage VRSM
200
V
Average output current
IO
Square wave, duty=1/2, Tc=95°C
8*
A
Surge current
IFSM
Sine wave 10ms
30
A
Operating junction temperature
Tj
-40 to +150
°C
Storage temperature
Tstg
Electrical characteristics (Ta=25°C Unless otherwise specified )
-40 to +150
°C
*Average forward current of centertap full wave connection
Item
Symbol
Conditions
Max.
Unit
Forward voltage drop
VFM
IFM=2.0A
1.4
V
Reverse current
IRRM
VR=VRRM
500
µA
Reverse recovery time
t rr
IF=0.1A, IR=0.1A
100
ns
Thermal resistance
Rth(j-c)
Junction to case
3.5
°C/W
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