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ES5E

5.0 Ampere Surface Mount Type Super Fast Recovery Rectifier Diodes

Thinki Semiconductor Co., Ltd. 

ES5A thru ES5J

®

ES5A thru ES5J

Pb

Pb Free Plating Product

5.0 Ampere Surface Mount Type Super Fast Recovery Rectifier Diodes

FEATURE

Glass passivated chip junction

The plastic package carries Underwriters Laboratory

Flammability Classification 94V-0

For surface mounted applications

Low reverse leakage

Built-in strain relief,ideal for automated placement

High forward surge current capability

High temperature soldering guaranteed:

250 C/10 seconds at terminals

MECHANICAL DATA

Case:SMC/DO-214AB Package

Terminals: Solder plated, solderable per MIL-STD-750,

Method 2026

Polarity: Color band denotes cathode band

Mounting Position: Any

Weight: 0.22 gram approximately

APPLICATION

LED SMPS/Industrial power supply

HID ballast stabilizer

Telecommunication SMPS/LED street lamp

OUTLINE

Unit:inch(millimeter)

Cathode Band

0.126 (3.20)

0.114 (2.90)

0.246 (6.22)

0.220 (5.59)

0.103 (2.62)

0.079 (2.06)

0.280 (7.11)

0.260 (6.60)

0.012 (0.305)

0.006 (0.152)

0.060 (1.52)

0.030 (0.76)

0.008 (0.2)

0.002(0.05)

0.320 (8.13)

0.305 (7.75)

SMC/DO-214AB

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25 C ambient temperature unless otherwise specified.

Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.

Maximum repetitive peak reverse voltage

Maximum RMS voltage

Maximum DC blocking voltage

Maximum average forward rectified current

at TL=75 C

Peak forward surge current

8.3ms single half sine-wave superimposed on

rated load (JEDEC Method)

Maximum instantaneous forward voltage at 5.0A

Maximum DC reverse current TA=25 C

at rated DC blocking voltage TA=100 C

Maximum reverse recovery time (NOTE 1)

Typical junction capacitance (NOTE 2)

Typical thermal resistance

Operating junction and storage temperature range

SYMBOLS ES5A ES5B ES5C ES5D ES5E ES5G ES5J

VRRM

VRMS

VDC

50 100 150 200 300 400 600

35 70 105 140 210 280 420

50 100 150 200 300 400 600

I(AV)

5.0

IFSM

VF

IR

trr

CJ

RQJA

TJ,TSTG

150.0

0.95

1.3

1.7

10.0

300.0

35

58.0

47.0

-65 to +150

UNITS

VOLTS

VOLTS

VOLTS

Amps

Amps

Volts

MA

ns

pF

C/W

C

Note:1.Reverse recovery condition IF=0.5A,IR=1.0A,Irr=0.25A

2.Measured at 1MHz and applied reverse voltage of 4.0V D.C.

© 2006 Thinki Semiconductor Co.,Ltd.

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http://www.thinkisemi.com/

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