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EMIF02-MIC03M6(2008) Ver la hoja de datos (PDF) - STMicroelectronics

Número de pieza
componentes Descripción
Fabricante
EMIF02-MIC03M6
(Rev.:2008)
ST-Microelectronics
STMicroelectronics ST-Microelectronics
EMIF02-MIC03M6 Datasheet PDF : 10 Pages
1 2 3 4 5 6 7 8 9 10
Characteristics
1
Characteristics
EMIF02-MIC03M6
Table 1.
Symbol
Absolute ratings (limiting values at Tamb = 25 °C unless otherwise specified)
Parameter
Value
Unit
VPP ESD discharge IEC61000-4-2 contact discharge
Tj
Junction temperature
Top Operating temperature range
Tstg Storage temperature range
8
kV
125
°C
-40 to + 85
°C
-55 to +150
°C
Table 2.
Symbol
Electrical characteristics (Tamb = 25 °C)
Parameter
VBR
IRM
VRM
VCL
Rd
IPP
RI/O
Cline
Breakdown voltage
Leakage current @ VRM
Stand-off voltage
Clamping voltage
Dynamic resistance
Peak pulse current
Series resistance between Input & Output
Input capacitance per line
Symbol
Test conditions
VBR
IRM
RI/O
Cline (1)
IR = 1 mA
VRM = 3 V per line
Tolerance ± 20%
VR = 0 V, F = 1 MHz, VOSC = 30 mV
1. Tolerance ±20%
I
IPP
VCL VBR VRM
IR
IRM
IRM
VRM VBR VCL
V
IR
IPP
Min.
Typ.
Max.
Unit
6
8
V
500
nA
68
Ω
45
pF
Figure 3. S21 attenuation measurement
0.00 dB
-5.00
-10.00
-15.00
-20.00
-25.00
-30.00
-35.00
F (Hz)
-40.00
300.0k 1.0M 3.0M 10.0M 30.0M 100.0M 300.0M 1.0G 3.0G
Figure 4. Analog cross talk measurements
(MIC R / MIC L)
0.00 dB
-10.00
-20.00
-30.00
-40.00
-50.00
-60.00
-70.00
F (Hz)
-80.00
300.0k 1.0M 3.0M
Xtalk R- L
10.0M 30.0M 100.0M 300.0M 1.0G
Xtalk L-R
3.0G
2/10

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