EM564081BA-85E Ver la hoja de datos (PDF) - Etron Technology

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Fabricante

EM564081BA-85E

512K x 8 Low Power SRAM

Etron Technology 

EtronTech

Data Retention Characteristics (Ta = -40°C to 85°C)

Symbol

Parameter

VDR

Data Retention Supply

Voltage

CE1# ≥ VDD - 0.2V, CE2 ≤ 0.2V,

VIN ≥ VDD - 0.2V or VIN ≤ 0.2V

IDR Data Retention Current

VDD = 1.0V, CE1# ≥ VDD - 0.2V,

CE2 ≤ 0.2V, VIN ≥ VDD - 0.2V or

VIN ≤ 0.2V

tSDR Chip Deselect to Data Retention Mode Time

tRDR Recovery Time

CE1# Controlled Data Retention Mode (see Note1)

VDD

VDD

DATA RETENTION MODE

2.7V

VIH

CE1

tSDR

VDD - 0.2V

EM564081

Min

Typ Max Unit

1.0

− 3.6 V

−

0.5 3.5 µA

0

− − ns

tRC

− − ns

tRDR

GND

CE2 Controlled Data Retention Mode (see Note2)

VDD

VDD

DATA RETENTION MODE

2.7V

VIH

CE2

tSDR

VIL

0.2V

tRDR

GND

Note:

1. If CE1# controlled data retention mode, minimum standby current mode is entered when CE2 ≤ 0.2V or

CE2 ≥ VDD - 0.2V.

2. In CE2 controlled data retention mode, minimum standby current mode is entered when CE2 ≤ 0.2V.

Preliminary

10

Rev 0.7

January 2001

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