EM55100 Ver la hoja de datos (PDF) - ELAN Microelectronics

Número de pieza

componentes Descripción

Fabricante

EM55100

TINY CONTROLLER-BASED SYNTHESIZER

ELAN Microelectronics 

ABSOLUTE MAXIMUM RATINGS

Items

Supply Voltage

Input Voltage

Operating Temperature

Storage Temperature

Sym.

VDD-VSS

VIN

TOP

TSTG

Preliminary

EASY SOUND - EM55000SERIES

TINYCONTROLLER-BASEDSYNTHESIZER

Min.

-0.3

VSS-0.3

-20.0

-55.0

Max.

6.0

VDD+0.3

70.0

+125.0

Unit

V

V

oC

oC

ELECTRICAL CHARACTERISTICS (25oC, VDD=3.0 Volts unless otherwise specified)

Parameter

Sym. Min. Typ. Max. Unit

Condition

Operating voltage

VDD

Standby current

IDDS

Operating current

IDDO

Operating current

IDDO

Drive current of P2,P3,P4

IOD

Sink current of P2

IOS

(before KEYB)

Sink current of P2(after KEYB) IOS

Sink current of P3,P4

IOS

Input current of P1

IIH

Output current of VO

IVO

Output current of VO,VO1

IVO

Oscillation resistor

R

Oscillation frequency

FOSC

2.2 3.0 5.5 V

-

-

2.0 µA VDD=3V

-

250 350 µA VDD=3V, No load,

constant current D/A operate

-

2.0

4.0 mA VDD=3V, No load,

push-pull current D/A operate

2.0 3.0

-

mA VDD=3V, VO=2.4V

-

3.0 10.0 µA VDD=3V, VO=3V

2.3 3.5

2.3 3.5

-

mA VDD=3V, VO=0.4V

-

mA VDD=3V, VO=0.4V

-

3.0 10.0 µA VDD=3V

4.0

5.2

6.4 mA VDD=3V, VO=0.7V

120 150 180 mA VDD=3V,(for 8Ω speaker)

-

470

-

KΩ VDD=3V,(for EM55001~55100)

100

-

KΩ VDD=3V,(for EM55200~55700)

1.08 1.2 1.32 MHz VDD=2.2~5.5V

* This specification are subject to be changed without notice.

1.23.2002 3

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