ED1702N Ver la hoja de datos (PDF) - Philips Electronics

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ED1702N

NPN general purpose transistor

Philips Electronics 

Philips Semiconductors

NPN general purpose transistor

Product specification

ED1702

FEATURES

• Low current (max. 500 mA)

• Low voltage (max. 25 V).

APPLICATIONS

• General purpose switching and amplification.

DESCRIPTION

NPN transistor in a TO-92; SOT54 plastic package.

PNP complement: ED1802.

PINNING

PIN

1

2

3

emitter

base

collector

DESCRIPTION

handbook, halfpage1

2

3

3

2

1

MAM182

Fig.1 Simplified outline (TO-92; SOT54)

and symbol.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL

VCBO

VCEO

VEBO

IC

ICM

IBM

Ptot

Tstg

Tj

Tamb

PARAMETER

collector-base voltage

collector-emitter voltage

emitter-base voltage

collector current (DC)

peak collector current

peak base current

total power dissipation

storage temperature

junction temperature

operating ambient temperature

CONDITIONS

open emitter

open base

open collector

Tamb ≤ 25 °C; note 1

Note

1. Transistor mounted on an FR4 printed-circuit board.

MIN.

−

−

−

−

−

−

−

−65

−

−65

MAX.

30

25

5

500

1

200

625

+150

150

+150

UNIT

V

V

V

mA

A

mA

mW

°C

°C

°C

1999 Apr 27

2

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