EDE1108ABSE-4A-E Ver la hoja de datos (PDF) - Elpida Memory, Inc
Número de pieza
componentes Descripción
Fabricante
EDE1108ABSE-4A-E Datasheet PDF : 27 Pages
| |||
EBE21EE8ABFA
Byte No.
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
Function described
Bit7 Bit6 Bit5 Bit4 Bit3 Bit2 Bit1 Bit0 Hex value Comments
Minimum row precharge time (tRP)
-8E
0
0
1
1
0
0
1
0
32H
-6E, -5C, -4A
0 0 1 1 1 1 0 0 3CH
Minimum row active to row active
delay (tRRD)
00
01
11
10
1EH
Minimum /RAS to /CAS delay (tRCD)
-8E
0
0
1
1
0
0
1
0
32H
-6E, -5C, -4A
0 0 1 1 1 1 0 0 3CH
Minimum active to precharge time
(tRAS)
0 0 1 0 1 1 0 1 2DH
-8E, -6E, -5C
-4A
0 0 1 0 1 0 0 0 28H
12.5ns
15ns
7.5ns
12.5ns
15ns
45ns
40ns
Module rank density
0 0 0 0 0 0 0 1 01H
Address and command setup time
before clock (tIS)
0 0 0 1 0 1 1 1 17H
-8E
-6E
0 0 1 0 0 0 0 0 20H
-5C
0 0 1 0 0 1 0 1 25H
-4A
Address and command hold time
after clock (tIH)
-8E
-6E
0 0 1 1 0 1 0 1 35H
0 0 1 0 0 1 0 1 25H
0 0 1 0 0 1 1 1 27H
-5C
0 0 1 1 0 1 1 1 37H
-4A
0 1 0 0 0 1 1 1 47H
Data input setup time before clock
(tDS)
0 0 0 0 0 1 0 1 05H
-8E
-6E, -5C
0 0 0 1 0 0 0 0 10H
-4A
0 0 0 1 0 1 0 1 15H
Data input hold time after clock (tDH)
-8E
0
0
0
1
0
0
1
0
12H
-6E
0 0 0 1 0 1 1 1 17H
-5C
0 0 1 0 0 0 1 0 22H
-4A
0 0 1 0 0 1 1 1 27H
Write recovery time (tWR)
0 0 1 1 1 1 0 0 3CH
Internal write to read command delay
(tWTR)
0 0 0 1 1 1 1 0 1EH
-8E, -6E, -5C
-4A
0 0 1 0 1 0 0 0 28H
Internal read to precharge command
delay (tRTP)
0
0
0
1
1
1
1
0
1EH
Memory analysis probe
characteristics
0 0 0 0 0 0 0 0 00H
Extension of Byte 41 and 42
-8E
0 0 1 1 0 1 1 0 36H
-6E, -5C, -4A
0 0 0 0 0 1 1 0 06H
Active command period (tRC)
-8E
0 0 1 1 1 0 0 1 39H
-6E, -5C
0 0 1 1 1 1 0 0 3CH
-4A
0 0 1 1 0 1 1 1 37H
1G bytes
0.17ns*1
0.20ns*1
0.25ns*1
0.35ns*1
0.25ns*1
0.27ns*1
0.37ns*1
0.47ns*1
0.05ns*1
0.10ns*1
0.15ns*1
0.12ns*1
0.17ns*1
0.22ns*1
0.27ns*1
15ns*1
7.5ns*1
10ns*1
7.5ns*1
TBD
57.5ns*1
60ns*1
55ns*1
Preliminary Data Sheet E0907E10 (Ver. 1.0)
6
Share Link: 