AS29LV800 Ver la hoja de datos (PDF) - Alliance Semiconductor

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componentes Descripción

Fabricante

AS29LV800

3V 1M × 8/512K × 16 CMOS Flash EEPROM

Alliance Semiconductor 

March 2001

AS29LV800

®

DC electrical characteristics

VCC = 2.7–3.6V

Parameter

Symbol Test conditions

Min

Max

Unit

Input load current

ILI

VIN = VSS to VCC, VCC = VCC MAX

-

±1

µA

A9 Input load current

ILIT

VCC = VCC MAX, A9 = 10V

35

µA

Output leakage current

ILO

VOUT = VSS to VCC, VCC = VCC MAX

-

±1

µA

Active current, read @ 5MHz

ICC1 CE = VIL, OE = VIH

-

20

mA

Active current, program/erase ICC2 CE = VIL, OE = VIH

-

Automatic sleep mode*

ICC3

CE = VIL, OE = VIH;

VIL= 0.3V, VIH = VCC - 0.3V

-

Standby current

ISB

CE = VCC - 0.3V, RESET = VCC - .3V

-

Deep power down current3

IPD

RESET = 0.3V

-

100

mA

5

µA

5

µA

5

µA

Input low voltage

VIL

-0.5

0.8

V

Input high voltage

VIH

0.7×VCC VCC + 0.3 V

Output low voltage

VOL

IOL = 4.0mA, VCC = VCC MIN

-

0.45

V

Output high voltage

VOH IOH = -2.0 mA, VCC = VCC MIN

0.85×VCC -

V

Low VCC lock out voltage

VLKO

1.5

-

V

Input HV select voltage

VID

9

11

V

* Automatic sleep mode enables the deep power down mode when addresses are stable for 150 ns. Typical sleep mode current is 200 nA.

3/22/01; V.1.0

Alliance Semiconductor

P. 15 of 25

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