AS29LV800 Ver la hoja de datos (PDF) - Alliance Semiconductor

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componentes Descripción

Fabricante

AS29LV800

3V 1M × 8/512K × 16 CMOS Flash EEPROM

Alliance Semiconductor 

March 2001

®

Word/byte configuration

JEDEC

Symbol Std Symbol

-

tELFL/tELFH

-

tFLQZ

-

tFHQZ

Parameter

CE to BYTE switching Low or High

BYTE switching Low to output High-Z

BYTE switching High to output Active

-70R/80/90/120

Min

Max

-

10

-

30

80

-

BYTE read waveform

CE

OE

Word

to

Byte

BYTE

DQ0-DQ14

DQ15/A-1

Byte

to

Word

BYTE

DQ0-DQ14

DQ15/A-1

tELFL

tELFH

DQ0-DQ14

Data output

DQ15 output

tFLQZ

DQ0-DQ7

Data output

Address input

DQ0-DQ7

Data output

Address input

tFHQV

DQ0-DQ14

Data output

DQ15 output

BYTE write waveform

CE

WE

BYTE

tSET

See Erase/Program operations table for tAS and tAH specifications.

(tAS)

falling edge of last WE signal

tHOLD (tAH)

Sector protect/unprotect

VID

RESET# VIH

SA, A6,

A1, A0

DATA

Don’t care

Valid*

Sector protect/unprotect

60h

60h

1 µs

CE#

WE#

Don’t care

Don’t care

Sector protect: 100 µs

Sector unprotect: 10 ms

Valid*

Verify

40h

Don’t care

Don’t care

AS29LV800

Unit

ns

ns

ns

Valid*

Status

OE#

3/22/01; V.1.0

Alliance Semiconductor

P. 21 of 25

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