E208931_HSC278 Ver la hoja de datos (PDF) - Hitachi -> Renesas Electronics

Número de pieza

componentes Descripción

Fabricante

E208931_HSC278

Silicon Schottky Barrier Diode

Hitachi -> Renesas Electronics 

HSC278

Absolute Maximum Ratings

(Ta = 25°C)

Item

Symbol

Repetitive peak reverse voltage

Reverse voltage

Non-Repetitive peak forward surge current

Peak forward current

Average rectified current

Junction temperature

V

RRM

V

R

IFSM *

IFM

I

O

Tj

Storage temperature

Tstg

Note: 10 msec sine wave 1 pulse

Value

Unit

30

V

30

V

200

mA

150

mA

30

mA

125

°C

−55 to +125

°C

Electrical Characteristics

(Ta = 25°C)

Item

Forward voltage

Reverse current

Capacitance

ESD-Capability *1

Symbol Min Typ Max

VF1

— — 0.30

V

— — 0.95

F2

IR

— — 700

C

— — 1.50

—

100 — —

Note:

1.

Failure

criterion

;

I

R

≥

1.4

µA

at

V

R

=

10

V

Unit

V

nA

pF

V

Test Condition

IF = 1 mA

I = 30 mA

F

VR = 10 V

VR = 1 V, f = 1 MHz

C = 200 pF, RL = 0 Ω, Both forward and

reverse direction 1 pulse.

Rev.2, Dec. 2000, page 2 of 5

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