CR3PM Ver la hoja de datos (PDF) - MITSUBISHI ELECTRIC
Número de pieza
componentes Descripción
Fabricante
CR3PM Datasheet PDF : 5 Pages
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HOLDING CURRENT VS.
GATE TO CATHODE RESISTANCE
400
TYPICAL EXAMPLE
350
IGT (25°C)
# 1 25µA
300
#1
# 2 50µA
250
#2
200
150
100
50
0
10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102
GATE TO CATHODE RESISTANCE (kΩ)
TURN-OFF TIME VS.
JUNCTION TEMPERATURE
80
IT = 2A
70 VD = 50V, VR = 50V
dv/dt = 5V/µs
60
50
40
30
TYPICAL
20
EXAMPLE
DISTRIBUTION
10
0
0 20 40 60 80 100 120 140 160
JUNCTION TEMPERATURE (°C)
GATE TRIGGER CURRENT VS.
GATE CURRENT PULSE WIDTH
104
7 TYPICAL EXAMPLE
tw
5
3
2
0.1s
103
7
5
3
2
102
7
5
3
2
101
100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103
GATE CURRENT PULSE WIDTH (µs)
MITSUBISHI SEMICONDUCTOR 〈THYRISTOR〉
CR3PM
LOW POWER USE
INSULATED TYPE, GLASS PASSIVATION TYPE
TURN-ON TIME VS. GATE CURRENT
101
7
5
4
VD = 100V
Ta = 25°C
TYPICAL
3
EXAMPLE
2
IGT (25°C)
# 33µA
100
#
7
5
4
3
2
10–1
100 2 3 4 5 7 101 2 3 4 5 7 102
GATE CURRENT (mA)
REPETITIVE PEAK REVERSE VOLTAGE VS.
JUNCTION TEMPERATURE
160
TYPICAL EXAMPLE
140
120
100
80
60
40
20
0
–40 –20 0 20 40 60 80 100 120 140 160
JUNCTION TEMPERATURE (°C)
Feb.1999
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