DU28120T Ver la hoja de datos (PDF) - M/A-COM Technology Solutions, Inc.
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DU28120T Datasheet PDF : 4 Pages
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DU28120T
RF Power MOSFET Transistor
120 W, 2 - 175 MHz, 28 V
Features
N-Channel enhancement mode device
DMOS structure
Lower capacitances for broadband operation
High saturated output power
Lower noise figure than bipolar devices
RoHS Compliant
Package Outline
Rev. V1
ABSOLUTE MAXIMUM RATINGS AT 25° C
Parameter
Symbol
Rating
Drain-Source Voltage
VDS
65
Gate-Source Voltage
VGS
20
Drain-Source Current
IDS
24
Power Dissipation
PD
269
Junction Temperature
TJ
200
Storage Temperature
TSTG
-55 to +150
Thermal Resistance
θJC
0.65
Units
V
V
A
W
°C
°C
°C/W
TYPICAL DEVICE IMPEDANCE
F (MHz)
ZIN (Ω)
ZLOAD (Ω)
30
4.0 - j8.0
3.4 + j2.4
50
1.0 - j2.5
2.2 +j1.3
100
1.0 - j0.5
2.2 + j0.0
VDD = 28V, IDQ = 600mA, POUT = 120 W
ZIN is the series equivalent input impedance of the device
from gate to source.
ZLOAD is the optimum series equivalent load impedance
as measured from drain to ground.
LETTER
DIM
A
B
C
D
E
F
G
H
J
K
L
M
N
MILLIMETERS
MIN
MAX
24.64
24.89
18.29
18.54
21.21
21.97
12.60
12.85
6.22
6.48
3.81
4.06
5.33
5.59
5.08
5.33
3.05
3.30
2.29
2.54
4.06
4.57
6.68
7.49
.10
.15
INCHES
MIN
MAX
.970
.980
.720
.730
.835
.865
.496
.506
.245
.255
.150
.160
.210
.220
.200
.210
.120
.130
.90
.100
.160
.180
.263
.295
.004
.006
ELECTRICAL CHARACTERISTICS AT 25°C
Parameter
Symbol Min Max Units
Test Conditions
Drain-Source Breakdown Voltage
BVDSS
65
-
V
VGS = 0.0 V , IDS = 3.0 mA
Drain-Source Leakage Current
IDSS
-
6.0
mA VGS = 28.0 V , VGS = 0.0 V
Gate-Source Leakage Current
IGSS
-
6.0
µA VGS = 20.0 V , VDS = 0.0 V
Gate Threshold Voltage
VGS(TH)
2.0
6.0
V
VDS = 10.0 V , IDS = 600.0 mA
Forward Transconductance
GM
3.0
-
S
VDS = 10.0 V , IDS = 6000.0 mA , Δ VGS = 1.0V, 80 μs Pulse
Input Capacitance
Output Capacitance
CISS
COSS
-
270
pF VDS = 28.0 V , F = 1.0 MHz
-
240
pF VDS = 28.0 V , F = 1.0 MHz
Reverse Capacitance
CRSS
-
48
pF VDS = 28.0 V , F = 1.0 MHz
Power Gain
Drain Efficiency
Load Mismatch Tolerance
1
GP
13
-
ŋD
60
-
VSWR-T - 30:1
dB
VDD = 28.0 V, IDQ = 600 mA, POUT = 120.0 W F =175 MHz
%
VDD = 28.0 V, IDQ = 600 mA, POUT = 120.0 W F =175 MHz
-
VDD = 28.0 V, IDQ = 600 mA, POUT = 120.0 W F =175 MHz
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