DTD113Z Ver la hoja de datos (PDF) - Unisonic Technologies

Número de pieza

componentes Descripción

Fabricante

DTD113Z

NPN DIGITAL TRANSISTOR (BUILT- IN BIAS RESISTORS)

Unisonic Technologies 

DTD113Z

NPN SILICON TRANSISTOR

 ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless others specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Supply Voltage

VCC

50

V

Input Voltage

Output Current

VIN

-5 ~ +10

V

IOUT

500

mA

SOT-23/SOT-323

200

mW

Power Dissipation

SOT-523

PC

150

mW

TO-92

625

mW

Junction Temperature

TJ

+150

°C

Storage Temperature

TSTG

-55 ~ +150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

 THERMAL DATA

PARAMETER

Junction to Ambient

SYMBOL

θJA

RATINGS

625

 ELECTRICAL SPECIFICATIONS (TA=25°C, unless others specified)

UNIT

°C/W

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

Input Voltage

VIN(OFF) VCC =5V, IOUT =100μA

VIN(ON) VOUT =0.3V, IOUT =20mA

1.5

Collector Cut-off Current

ICBO

VCB=50V

Collector Cut-off Current

ICEO

VCE=50V

Output Voltage

VOUT(ON) IOUT/IIN =50mA/2.5mA

Input Current

IIN

VIN=5V

Output Current

IOUT(OFF) VCC =50V, VIN =0V

DC Current Gain

hFE

VOUT =5V, IOUT =50mA

82

Input Resistance

R1

0.7

Resistor Ratio

R2/R1

8

Transition Frequency

fT

VCE =10V, IE =−50mA, f=100MHz (Note)

Note: Transition frequency of the device.

TYP

0.1

1

10

200

MAX UNIT

0.3

V

100 nA

0.5 μA

0.3 V

7.2 mA

0.5 μA

1.3 KΩ

12

MHz

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

2 of 3

QW-R206-082.J

Share Link: