DTD113ZG(2011) Ver la hoja de datos (PDF) - Unisonic Technologies

Número de pieza

componentes Descripción

Fabricante

DTD113ZG
(Rev.:2011)

NPN DIGITAL TRANSISTOR (BUILT- IN BIAS RESISTORS)

Unisonic Technologies 

DTD113Z

NPN SILICON TRANSISTOR

„ ABSOLUTE MAXIMUM RATINGS (TA=25°C)

PARAMETER

SYMBOL

RATINGS

UNIT

Supply Voltage

VCC

50

V

Input Voltage

VIN

-5 ~ +10

V

Output Current

IOUT

500

mA

SOT-23/SOT-323

200

mW

Power Dissipation

SOT-523

PC

150

mW

TO-92

625

mW

Junction Temperature

TJ

+150

°C

Storage Temperature

TSTG

-55 ~ +150

°C

Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

„ ELECTRICAL SPECIFICATIONS (TA=25°C, unless others specified)

PARAMETER

SYMBOL

Input Voltage

VIN(OFF)

VIN(ON)

Output Voltage

VOUT(ON)

Input Current

IIN

Output Current

IOUT(OFF)

DC Current Gain

hFE

Input Resistance

R1

Resistor Ratio

R2/R1

Transition Frequency

fT

Note: Transition frequency of the device

TEST CONDITIONS

MIN

VCC =5V, IOUT =100μA

VOUT =0.3V, IOUT =20mA

1.5

IOUT/IIN =50mA/2.5mA

VIN=5V

VCC =50V, VIN =0V

VOUT =5V, IOUT =50mA

82

0.7

8

VCE =10V, IE =−50mA, f=100MHz (Note)

TYP

0.1

1

10

200

MAX UNIT

0.3

V

0.3 V

7.2 mA

0.5 μA

1.3 KΩ

12

MHz

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

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QW-R206-082.F

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