DTD113ZU Ver la hoja de datos (PDF) - ROHM Semiconductor
Número de pieza
componentes Descripción
Fabricante
DTD113ZU Datasheet PDF : 7 Pages
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DTD113Z series
lAbsolute maximum ratings (Ta = 25°C)
Parameter
Supply voltage
Input voltage
Collector current
Power dissipation
Junction temperature
Range of storage temperature
Symbol
VCC
VIN
IC*1
PD *2
Tj
Tstg
Data Sheet
Values
Unit
50
V
-5 to +10
V
500
mA
200
mW
150
°C
-55 to +150
°C
lElectrical characteristics(Ta = 25°C)
Parameter
Symbol
Conditions
Input voltage
VI(off)
VI(on)
VCC = 5V, IO = 100mA
VO = 0.3V, IO = 20mA
Output voltage
VO(on) IO / II = 50mA / 2.5mA
Input current
II
VI = 5V
Output current
IO(off) VCC = 50V, VI = 0V
DC current gain
GI
VO = 5V, IO = 50mA
Input resistance
R1
-
Resistance ratio
R2/R1
-
Transition frequency
fT *1
VCE = 10V, IE = -50mA,
f = 100MHz
*1 Characteristics of built-in transistor
*2 Each terminal mounted on a reference footprint
Min.
-
1.5
-
-
-
82
0.7
8
-
Typ.
-
-
0.1
-
-
-
1
10
200
Max.
0.3
-
0.3
7.2
0.5
-
1.3
12
-
Unit
V
V
mA
mA
-
kW
-
MHz
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2/6
2012.07 - Rev.D
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