DTC123YG(2014) Ver la hoja de datos (PDF) - Unisonic Technologies

Número de pieza

componentes Descripción

Fabricante

DTC123YG
(Rev.:2014)

NPN DIGITAL TRANSISTOR (BUILT- IN BIAS RESISTORS)

Unisonic Technologies 

DTC123Y

NPN SILICON TRANSISTOR

 ABSOLUTE MAXIMUM RATING (TA=25°C, unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Supply Voltage

VCC

50

V

Input Voltage

Output Current

Power Dissipation

SOT-23/SOT-323

SOT-523

VIN

IOUT

IC(MAX)

PD

-5 ~ +12

V

100

mA

100

mA

200

mW

150

mW

Storage Temperature

TJ

+150

°C

Junction Temperature

TSTG

-55~+150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

 ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

Input Voltage

VIN(OFF)

VIN(ON)

VCC=5V, IOUT=100μA

VOUT=0.3V, IOUT=20mA

Output Voltage

VOUT (ON) IOUT/IIN=10mA/0.5mA

Input Current

IIN

VIN=5V

Output Current

IOUT(OFF) VCC=50V, VIN=0V

DC Current Gain

hFE

VOUT=5V, IOUT=10mA

Input Resistance

R1

Resistance Ratio

R2/R1

Transition Frequency

fT

VCE=10V, IE=-5mA, f=100MHz(Note)

Note: Transition frequency of the device

MIN

3

33

1.54

3.6

TYP

0.1

2.2

4.5

250

MAX

0.3

0.3

3.8

0.5

UNIT

V

V

V

mA

μA

2.86 KΩ

5.5

MHz

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

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QW-R206-069.E

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