DTC115EE(2012) Ver la hoja de datos (PDF) - ROHM Semiconductor
Número de pieza
componentes Descripción
Fabricante
DTC115EE
(Rev.:2012)
(Rev.:2012)
ROHM Semiconductor
DTC115EE Datasheet PDF : 10 Pages
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DTC115E series
lAbsolute maximum ratings (Ta = 25°C)
Parameter
Supply voltage
Input voltage
Output current
Collector current
Power dissipation
DTC115EM
DTC115EEB
DTC115EE
DTC115EUA
DTC115EKA
Junction temperature
Range of storage temperature
Symbol
VCC
VIN
IO
IC(MAX.)*1
PD *2
Tj
Tstg
Data Sheet
Values
Unit
50
V
-10 to +40
V
20
mA
100
mA
150
mW
200
mW
150
°C
-55 to +150
°C
lElectrical characteristics(Ta = 25°C)
Parameter
Symbol
Input voltage
VI(off)
VI(on)
Output voltage
VO(on)
Input current
II
Output current
IO(off)
DC current gain
GI
Input resistance
R1
Resistance ratio
R2/R1
Conditions
VCC = 5V, IO = 100μA
VO = 0.3V, IO = 1mA
IO / II = 5mA / 0.25mA
VI = 5V
VCC = 50V, VI = 0V
VO = 5V, IO = 5mA
-
-
Transition frequency
fT *1
VCE = 10V, IE = -5mA,
f = 100MHz
*1 Characteristics of built-in transistor
*2 Each terminal mounted on a reference footprint
Min. Typ. Max. Unit
-
-
0.5
V
3
-
-
-
0.1
0.3
V
-
-
0.15 mA
-
-
0.5
mA
82
-
-
-
70
100 130
kW
0.8
1
1.2
-
-
250
-
MHz
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2012.04 - Rev.A
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