DTB143TK(RevA) Ver la hoja de datos (PDF) - ROHM Semiconductor

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DTB143TK
(Rev.:RevA)

Digital transistors (built-in resistors)

ROHM Semiconductor 

Transistors

DTB143TK

zElectrical characteristics (Ta=25°C)

Parameter

Symbol Min. Typ. Max. Unit

Conditions

Collector-base breakdown voltage

BVCBO −50 −

−

V IC= −50µA

Collector-emitter breakdown voltage BVCEO −40 −

−

V IC= −1mA

Emitter-base breakdown voltage

BVEBO −5 −

−

V IE= −50µA

Collector cutoff current

ICBO

−

− −0.5 µA VCB= −50V

Emitter cutoff current

IEBO

− − −0.5 µA VEB= −4V

Collector-emitter saturation voltage VCE(sat) − − −0.3 V IC/IB= −50mA/−2.5mA

DC current transfer ratio

hFE 100 250 600 − VCE= −5V, IC= −50mA

Input resistance

R1 3.29 4.7 6.11 kΩ

−

Transition frequency

∗ Transition frequency of the device

fT

− 200 − MHz VCE= −10V, IE=50mA, f=100MHz ∗

zPackaging specifications

Package

Packaging type

Code

Part No.

Basic ordering

unit (pieces)

DTB143TK

SMT3

Taping

T146

3000

zElectrical characteristic curves

1k

VCE= −5V

500

200

100

Ta=100 C

25 C

50

−40 C

20

10

5

2

1

-0.5m -1m -2m

-5m -10m -20m -50m -100m -200m -500m

COLLECTOR CURRENT : IC (A)

Fig.1 DC current gain vs. collectorcurrent

-1

lC/lB=20

-500m

-200m

Ta=100 C

25 C

-100m

−40 C

-50m

-20m

-10m

-5m

-2m

-1m

-0.5m -1m -2m

-5m -10m -20m -50m -100m -200m -500m

COLLECTOR CURRENT : IC (A)

Fig.2Collector-emitter saturation

voltage vs. collector current

Rev.A

2/2

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