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DTA115T

DIGITAL TRANSISTORS (BUILT- IN BIAS RESISTORS)

Unisonic Technologies 

DTA115T

PNP SILICON TRANSISTOR

 ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified)

PARAMETER

SYMBOL

RATING

UNIT

Collector-Base Voltage

VCBO

-50

V

Collector-Emitter Voltage

Emitter-Base Voltage

VCEO

-50

V

VEBO

-5

V

Collector Current

Collector Power Dissipation

IC

-100

mA

PC

200

mW

Junction Temperature

TJ

+150

°C

Storage Temperature

TSTG

-55 ~ +150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

 ELECTRICAL SPECIFICATIONS (TA=25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

BVCBO

BVCEO

IC=-50μA

IC=-1mA

-50

V

-50

V

Emitter-Base Breakdown Voltage

Collector-Emitter Saturation Voltage

BVEBO IE=-50μA

VCE(SAT) IC=-1mA, IB=-0.1mA

-5

V

-0.3 V

Collector Cutoff Current

Emitter Cutoff Current

ICBO

IEBO

VCB=-50V

VEB=-4V

-0.5 μA

-0.5 μA

DC Current Gain

Input Resistance

hFE VCE=-5V, IC=-1mA

R1

100 250 600

70 100 130 kΩ

Transition Frequency

fT

VCE=-10V, IE=5mA,f=100MHz (Note)

250

MHz

Note: Transition frequency of the device

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

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QW-R206-062.C

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