DTA115T(2011) Ver la hoja de datos (PDF) - Unisonic Technologies
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DTA115T Datasheet PDF : 2 Pages
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DTA115T
PNP SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (TA=25°C)
PARAMETER
SYMBOL
RATING
Collector-Base Voltage
VCBO
-50
Collector-Emitter Voltage
VCEO
-50
Emitter-Base Voltage
VEBO
-5
Collector Current
IC
-100
Collector Power Dissipation
PC
200
Junction Temperature
TJ
+150
Storage Temperature
TSTG
-55~+150
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
UNIT
V
V
V
mA
mW
℃
℃
ELECTRICAL SPECIFICATIONS (TA=25°C)
PARAMETER
SYMBOL
TEST CONDITIONS
Collector-Base Breakdown Voltage BVCBO IC=-50μA
Collector-Emitter Breakdown Voltage BVCEO IC=-1mA
Emitter-Base Breakdown Voltage
BVEBO IE=-50μA
Collector-Emitter Saturation Voltage VCE(SAT) IC=-1mA, IB=-0.1mA
Collector Cutoff Current
ICBO VCB=-50V
Emitter Cutoff Current
IEBO VEB=-4V
DC Current Gain
hFE VCE=-5V, IC=-1mA
Input Resistance
R1
Transition Frequency
fT
VCE=-10V, IE=5mA,f=100MHz (Note)
Note: Transition frequency of the device
MIN TYP MAX UNIT
-50
V
-50
V
-5
V
-0.3 V
-0.5 μA
-0.5 μA
100 250 600
70 100 130 kΩ
250
MHz
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R206-062,Ba
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