DTA123E
PNP SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (TA=25°C)
PARAMETER
SYMBOL
RATINGS
UNIT
Supply Voltage
VCC
-50
V
Input Voltage
VIN
-12 ~ +10
V
Output Current
IOUT
-100
mA
SOT-523
150
mW
Power Dissipation
SOT-23/SOT-323
PD
200
mW
TO-92
625
mW
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL SPECIFICATIONS (TA=25°C)
PARAMETER
SYMBOL
Input Voltage
VIN(OFF)
VIN(ON)
Output Voltage
VOUT(ON)
Input Current
IIN
Output Current
IOUT(OFF)
DC Current Gain
GIN
Input Resistance
R1
Resistance Ratio
R2/R1
Transition Frequency
fT
Note: Transition frequency of the device
TEST CONDITIONS
VCC =-5V, IOUT =-100μA
VOUT =-0.3V, IOUT =-20mA
IOUT/IIN =10mA/-0.5mA
VIN=-5V
VCC =-50V, VIN =0V
VOUT =-5V, IOUT =-20mA
VCE =-10V, IE =−5mA, f=100MHz (Note)
MIN
-3
20
1.54
0.8
TYP
-0.1
2.2
1
250
MAX UNIT
-0.5
V
-0.3 V
-3.8 mA
-0.5 μA
2.86 KΩ
1.2
MHz
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R206-086,C