DTA123E Ver la hoja de datos (PDF) - Unisonic Technologies

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DTA123E

DIGITAL TRANSISTORS (BUILT-IN BIAS RESISTORS)

Unisonic Technologies 

DTA123E

PNP SILICON TRANSISTOR

„ ABSOLUTE MAXIMUM RATINGS (TA=25°C)

PARAMETER

SYMBOL

RATINGS

UNIT

Supply Voltage

VCC

-50

V

Input Voltage

VIN

-12 ~ +10

V

Output Current

IOUT

-100

mA

SOT-523

150

mW

Power Dissipation

SOT-23/SOT-323

PD

200

mW

TO-92

625

mW

Junction Temperature

TJ

+150

°C

Storage Temperature

TSTG

-55 ~ +150

°C

Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

„ ELECTRICAL SPECIFICATIONS (TA=25°C)

PARAMETER

SYMBOL

Input Voltage

VIN(OFF)

VIN(ON)

Output Voltage

VOUT(ON)

Input Current

IIN

Output Current

IOUT(OFF)

DC Current Gain

GIN

Input Resistance

R1

Resistance Ratio

R2/R1

Transition Frequency

fT

Note: Transition frequency of the device

TEST CONDITIONS

VCC =-5V, IOUT =-100μA

VOUT =-0.3V, IOUT =-20mA

IOUT/IIN =10mA/-0.5mA

VIN=-5V

VCC =-50V, VIN =0V

VOUT =-5V, IOUT =-20mA

VCE =-10V, IE =−5mA, f=100MHz (Note)

MIN

-3

20

1.54

0.8

TYP

-0.1

2.2

1

250

MAX UNIT

-0.5

V

-0.3 V

-3.8 mA

-0.5 μA

2.86 KΩ

1.2

MHz

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

2 of 3

QW-R206-086,C

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