DTA115TE Ver la hoja de datos (PDF) - ROHM Semiconductor

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componentes Descripción

Fabricante

DTA115TE

Digital transistors (built-in resistor)

ROHM Semiconductor 

Transistors

DTA115TH / DTA115TE / DTA115TUA /

DTA115TKA / DTA115TSA

!Absolute maximum ratings (Ta = 25°C)

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Collector power

dissipation

DTA115TH / DTA115TE

DTA115TUA / DTA115TKA

DTA115TSA

Junction temperature

Storage temperature

Symbol

VCBO

VCEO

VEBO

IC

PC

Tj

Tstg

Limits

−50

−50

−5

−100

150

200

300

150

−55 ~ +150

Unit

V

V

V

mA

mW

°C

°C

!Package, marking, and packaging specifications

Part No.

Package

Marking

Packaging code

Basic ordering unit (pieces)

DTA115TH

EMT3H

99

T2L

8000

DTA115TE DTA115TUA DTA115TKA DTA115TSA

EMT3

UMT3

SMT3

SPT

99

99

99

−

TL

T106

T146

TP

3000

3000

3000

5000

!Electrical characteristics (Ta = 25°C)

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cutoff current

Emitter cutoff current

Collector-emitter saturation voltage

DC current transfer ratio

Input resistance

Transition frequency

∗Transition frequency of the device.

Symbol

BVCBO

BVCEO

BVEBO

ICBO

IEBO

VCE(sat)

hFE

R1

fT

Min. Typ. Max. Unit

Conditions

−50

−

−

V IC=−50µA

−50

−

−

V IC=−1mA

−5

−

−

V IE=−50µA

−

−

−0.5

µA VCB=−50V

−

−

−0.5

µA VEB=−4V

−

−

−0.3

V IC/IB=−1mA/−0.1mA

100

250

600

−

IC=−1mA , VCE=−5V

70

100

130

kΩ

−

−

250

−

MHZ VCE=−10V , IE=5mA , f=100MHZ

∗

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