DS2120E Ver la hoja de datos (PDF) - Dallas Semiconductor -> Maxim Integrated

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DS2120E

Ultra3 LVD SCSI Terminator

Dallas Semiconductor -> Maxim Integrated 

RECOMMENDED OPERATING CONDITIONS

PARAMETER

SYMBOL MIN

Termpower Voltage, LVD Mode VTPWR (LVD) 2.7

Logic 0

VIL

-0.3

Logic 1

VIH

2.0

Operating Temperature

VAMB

0

DS2120

TYP

MAX

5.5

+0.8

Vtpwr + 0.3

70

UNITS

V

V

V

°C

NOTES

13

13

LOW-VOLTAGE DIFFERENTIAL CHARACTERISTICS

PARAMETER

SYMBOL MIN

TYP

Differential Mode

Termination Resistance

RDM

100

Common Mode Termination

Resistance

RCM

110

Differential Mode Bias

Common Mode Bias

Output Capacitance

Mode-Change Delay

VDM

VCM

COUT

MCD

100

1.125

0.66

1.25

MAX

110

190

125

1.375

3

2

UNITS

?

?

mV

V

pF

ms

NOTES

2

1

1, 12

DC CHARACTERISTICS

PARAMETER

Termpower Current

Input Leakage High

Input Leakage Low

Output Current High

Output Current Low

DIFF_CAP LVD

Operating Range

DIFFSENSE Driver

Output Voltage

DIFFSENSE Driver

Source Current

DIFFSENSE Driver

Sink Current

SYMBOL

ITPMR

IIH

IIL

IOH

IOL

VLVDOR

VDSO

IDSH

IDSL

MSTR/SLV Input Leakage

IMSTRSLV

ISO Input Leakage

IISO

Thermal Shutdown

MIN

-1.0

4.0

0.7

1.2

5

20

-6.5

-125

TYP MAX UNITS NOTES

12

30

mA

2, 3

µA

14, 15

1.0

µA

14, 15

-1.0

mA

4, 6

mA

5, 6

1.9

V

1.4

V

7, 8

15

mA 7, 9, 11

200

µA 7, 10, 11

+125

µA

+6.5

µA

150

°C

7 of 10

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