RMWL38001 Ver la hoja de datos (PDF) - Raytheon Company

Número de pieza

componentes Descripción

Fabricante

RMWL38001

37-40 GHz Low Noise Amplifier MMIC

Raytheon Company 

RMWL38001

37-40 GHz Low Noise Amplifier MMIC

PRODUCT INFORMATION

Recommended

Procedure

for Biasing and

Operation

CAUTION: LOSS OF GATE VOLTAGE (VG) WHILE DRAIN VOLTAGE (VDS) IS PRESENT MAY DAMAGE THE

AMPLIFIER CHIP.

The following sequence of steps must be followed to properly test the amplifier:

Step 1: Turn off RF input power.

Step 2: Connect the DC supply grounds to the

grounds of the chip carrier.

Slowly apply negative gate bias supply voltage

of -1.5 V to Vg.

Step 3: Slowly apply positive drain bias supply voltage

of +4 V to Vd.

Step 4: Adjust gate bias voltage to set the quiescent

current of Idq=50 mA.

Step 5: After the bias condition is established, RF input

signal may now be applied at the appropriate

frequency band.

Step 6: Follow turn-off sequence of:

(i) Turn off RF input power,

(ii) Turn down and off drain voltage (Vd),

(iii) Turn down and off gate bias voltage (Vg).

Performance

Data

RMWL38001, 37-40GHz Low-Noise Amplifier, Typical Performance,

Vd=4V, Idq=50mA, Chip Bonded into 50 ohm Test Fixture

30

S21

20

10

0

S11

-10

S22

-20

-30

0

10

20

30

40

50

Frequency (GHz)

www.raytheon.com/micro

Characteristic performance data and specifications are subject to change without notice.

Revised March 14 2001

Page 4

Raytheon RF Components

362 Lowell Street

Andover, MA 01810

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