DS1035M-8 Ver la hoja de datos (PDF) - Dallas Semiconductor -> Maxim Integrated

Número de pieza

componentes Descripción

Fabricante

DS1035M-8

3-in-1 High–Speed Silicon Delay Line

Dallas Semiconductor -> Maxim Integrated 

TEST CONDITIONS

Ambient Temperature:

25°C ±=3°C

Supply Voltage (VCC):

Input Pulse:

5.0V ±=0.1V

High: 3.0V ±=0.1V

Low: 0.0V ±=0.1V

Source Impedance: 50Ω=max.

Rise and Fall Time: 3.0 ns max. - Measured between 0.6V and 2.4V.

Pulse Width: 500 ns

Pulse Period: 1 µs

Output Load Capacitance: 15 pF

Output:

Each output is loaded with the equivalent of one 74F04 input gate.

Data is measured at the 1.5V level on the rising and falling edges.

DS1035

Note: The above conditions are for test only and do not restrict the devices under other data sheet

conditions.

TIMING DIAGRAM

NOTES:

1. All voltages are referenced to ground.

2. @ VCC=5 volts and 25°C, delay accuracy on both the rising and falling edges within tolerances given

in Table 1.

3. Pulse width and duty cycle specifications may be exceeded; however, accuracy will be application

sensitive with respect to decoupling, layout, etc.

5 of 6

Share Link: