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CHA2095A

36-40GHz Low Noise Very High Gain Amplifier

United Monolithic Semiconductors 

CHA2095a

36-40GHz Low Noise Amplifier

Electrical Characteristics

Tamb = +25°C, Vd= 3.5V

Symbol

Parameter

Fop Operating frequency range (1)

Min Typ Max Unit

36

40

GHz

G

Small signal gain (1)

22

26

dB

∆G Small signal gain flatness (1)

±1.0

dB

∆Gsb Gain ripple over 40MHz ( within -30 ; +75°C )

0.5 dBpp

Is

Reverse isolation (1)

35

40

dB

P1dB Output power at 1dB gain compression

8

10

dBm

VSWRin Input VSWR (1)

2.5:1 3.0:1

VSWRout Output VSWR (1)

2.5:1 3.0:1

NF Noise figure (2)

3.5

4.0

dB

Vdc DC Voltage

Vd

Vg

3.5

4

V

-2

+0.4

V

Id

Bias current (2)

90

140

mA

(1) These values are representative of on-wafer measurements that are made without bonding

wires at the RF ports.

(2) 90 mA is the typical bias current used for on wafer measurements, with adjusting Vg1,2

voltage for optimum noise figure and Vg3,4 adjusting for maximum gain.

Absolute Maximum Ratings

Tamb. = 25°C (1)

Symbol

Parameter

Values

Unit

Vd

Drain bias voltage

4.0

V

Vg

Gate bias voltage

-2.0 to +0.4

V

Id

Drain bias current

200

mA

Pin

Maximum peak input power overdrive (2)

+15

dBm

Ta

Operating temperature range

-40 to +85

°C

Tstg

Storage temperature range

-55 to +155

°C

(1) Operation of this device above anyone of these parameters may cause permanent damage.

(2) Duration < 1s.

Ref. : DSCHA20958147

2/7

Specifications subject to change without notice

Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE

Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09

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