DIM800NSM33-F000 Ver la hoja de datos (PDF) - Dynex Semiconductor
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DIM800NSM33-F000 Datasheet PDF : 8 Pages
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DIM800NSM33-F000
ABSOLUTE MAXIMUM RATINGS
Stresses above those listed under ‘Absolute Maximum Ratings’ may cause permanent damage to the device. In
extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package.
Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect
device reliability.
Tcase = 25°C unless stated otherwise
Symbol
Parameter
VCES
VGES
IC
IC(PK)
Pmax
I2t
Collector-emitter voltage
Gate-emitter voltage
Continuous collector current
Peak collector current
Max. transistor power dissipation
Diode I2t value
Visol Isolation voltage – per module
QPD Partial discharge – per module
VGE = 0V
Test Conditions
Tcase = 90°C
1ms, Tcase = 115°C
Tcase = 25°C, Tj = 150°C
VR = 0, tp = 10ms, Tj = 125ºC
Commoned terminals to base plate.
AC RMS, 1 min, 50Hz
IEC1287, V1 = 3500V, V2 = 2600V, 50Hz RMS
Max. Units
3300
±20
800
1600
10400
320
V
V
A
A
W
kA2s
6000 V
10
pC
THERMAL AND MECHANICAL RATINGS
Internal insulation material:
AlN
Baseplate material:
AlSiC
Creepage distance:
33mm
Clearance:
20mm
CTI (Comparative Tracking Index):
350
Symbol
Parameter
Test Conditions
Rth(j-c)
Rth(j-c)
Rth(c-h)
Tj
Thermal resistance – transistor (per arm)
Thermal resistance – diode (per arm)
Thermal resistance – case to heatsink
(per module)
Junction temperature
Continuous dissipation –
junction to case
Continuous dissipation –
junction to case
Mounting torque 5Nm
(with mounting grease)
Transistor
Diode
Tstg Storage temperature range
-
Mounting – M6
Screw torque
Electrical connections – M4
Electrical connections – M8
Min Typ. Max Units
-
-
12 °C/kW
-
-
24 °C/kW
-
-
8 °C/kW
-
- 150 °C
-
- 125 °C
-40 - 125 °C
-
-
5
Nm
-
-
2
Nm
-
-
10 Nm
2/8
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
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