19A250AS Ver la hoja de datos (PDF) - IXYS CORPORATION
Número de pieza
componentes Descripción
Fabricante
19A250AS Datasheet PDF : 3 Pages
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DGS 19-025AS DGS 20-025A(S)
DGSK 40-025A(S)
30
10
A
IF
1
300
pF
CJ
100
TVJ =
0,1
125°C
25°C
0,01
0,0 0,5 1,0 1,5 2,0 V 2,5
VF
Fig. 1 typ. forward characteristics
TVJ = 125°C
10
0,1
1
10 100 V 1000
VR
Fig. 2 typ. junction capacity
versus blocking voltage
10
K/W
1
ZthJC
0,1
TO-252
TO-220
Single Pulse
0,01
0,00001
0,0001
0,001
0,01
0,1
Fig. 3 typ. thermal impedance junction to case
DGS 20-022/025A
1 s 10
t
Note:
explanatory comparison of the basic operational behaviour of rectifier diodes and Gallium Arsenide
Schottky diodes:
conduction
forward characteristics
turn off characteristics
turn on characteristics
Rectifier Diode
by majority + minority carriers
VF (IF)
extraction of excess carriers
causes temperature dependant
reverse recovery (trr, IRM, Qrr)
delayed saturation leads to VFR
GaAs Schottky Diode
by majority carriers only
VF (IF), see Fig. 1
reverse current charges
junction capacity CJ, see Fig. 2;
not temperature dependant
no turn on overvoltage peak
IXYS reserves the right to change limits, test conditions and dimensions
© 2004 IXYS All rights reserved
2-3
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