DG613DY-T1-E3 Ver la hoja de datos (PDF) - Vishay Semiconductors

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componentes Descripción

Fabricante

DG613DY-T1-E3

High-Speed, Low-Glitch D/CMOS Analog Switches

Vishay Semiconductors 

DG611/612/613

Vishay Siliconix

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

- 120

- 100

V+ = 15 V

V- = - 3 V

- 80

Crosstalk

- 60

Off Isolation

- 40

- 20

1

10

100

f – Frequency (MHz)

Crosstalk and Off Isolation vs. Frequency

6

5 V+ = 15 V

V- = - 3 V

4

VL = 5 V

3

CX = 0, 5 V

I+

2

1

IL

0

-1

I-

-2

-3

-4

-5

1k

100 k

100 k

1M

10 M

f – Frequency (Hz)

Supply Currents vs. Switching Frequency

SCHEMATIC DIAGRAM (TYPICAL CHANNEL)

V+

VL

Input

INX

Logic

Level

Translator

Driver

S

D

DMOS Switch

V-

TEST CIRCUITS

+5V

+ 15 V

±2V

VL

S

IN

GND

V+

D

VO

RL

CL

V-

300 Ω

V-

Figure 1.

5V

Logic Input

0V

VS = ± 2 V

Switch Output

0V

Document Number: 70057

S-71155–Rev. H, 11-Jun-07

Figure 2. Switching Time

50 %

tr < 10 ns

tf < 10 ns

90 %

20 %

tON

tOFF

CL (includes fixture and stray capacitance)

VO = VS

RL

RL + rDS(on)

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