DG641 Ver la hoja de datos (PDF) - Vishay Semiconductors
Número de pieza
componentes Descripción
Fabricante
DG641 Datasheet PDF : 18 Pages
| |||
TEST CIRCUITS
DG641, DG642, DG643
Vishay Siliconix
+ 15 V
V+
Rg
S
D
Vg
IN
3V
GND
V-
-3V
VO
CL
1000 pF
VO
VO
ON
INX
ON
OFF
VO = measured voltage error due to charge injection
The charge injection in coulombs is Q = CL x VO
Figure 3. Charge Injection
+ 15 V
C
VS
Rg = 50
0 V, 2.4 V
V+
S
D
IN
GND
V-
C
VO
RL
-3V
VS
Off Isolation = 20 log
VO
Figure 4. Off Isolation
RIN
10
DG641
S1
D1
S2
D2
S3
D3
S4
D4
Signal
Generator
75
V
"1"
(a)
VOUT
RL
75
RL
RL
RL
RIN
10
Signal
Generator
75
Figure 5. All Hostile Crosstalk - XTALK(AH)
DG642
S1
D1
S2
D2
V
"0"
(b)
XTALK(AH)
=
20
log10
VOUT
V
VOUT
RL
75
RL
Document Number: 70058
S11-0154-Rev. F, 31-Jan-11
www.vishay.com
7
Share Link: 