GLT4160L16-35TC Ver la hoja de datos (PDF) - G-Link Technology
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GLT4160L16-35TC Datasheet PDF : 16 Pages
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G-LINK
GLT4160L16
1M X 16 CMOS DYNAMIC RAM WITH EXTENDED DATA OUTPUT
Mar 2000 (Rev.2.0)
AC Characteristics
TA = 0°C to 70°C , VCC = 3V ±0.3V, VIH / VIL = 3.0/0 V, VOH/VOL = 2.0/0.8V
An initial pause of 100 µs and 8 CAS -before- RAS or RAS -only refresh cycles are required after power-up.
35
40
50
60
Parameter
Symbol Min. Max. Min. Max. Min. Max. Min. Max. Unit Notes
Read or Write Cycle Time
Read Modify Write Cycle Time
RAS Precharge Time
RAS Pulse Width
Access Time from RAS
Access Time from CAS
Access Time from Column Address
CAS to Output Low-Z
CAS to Output High-Z
RAS Hold Time
RAS Hold Time Referenced to OE
CAS Hold Time
CAS Pulse Width
RAS to CAS Delay Time
RAS to Column Address Delay Time
CAS to RAS Precharge Time
Row Address Set-Up Time
Row Address Hold Time
Column Address Set-Up Time
Column Address Hold Time
Column Address to RAS Lead Time
Column Address Hold Time Referenced to RAS
Read Command Set-Up Time
Read Command Hold Time Referenced to CAS
Read Command Hold Time Referenced to RAS
Write Command Set-Up Time
Write Command Hold Time
Write Command Pulse Width
Write Command to RAS Lead Time
Write Command to CAS Lead Time
tRC
tRWC
tRP
tRAS
tRAC
tCAC
tAA
tCLZ
tCEZ
tRSH
tROH
tCSH
tCAS
tRCD
tRAD
tCRP
tASR
tRAH
tASC
tCAH
tRAL
tAR
tRCS
tRCH
tRRH
tWCS
tWCH
tWP
tRWL
tCWL
65
70
85
104
ns
86
91
106
133
ns
25
25
30
40
ns
35 100K 40 100K 50 100K 60 100k ns
35
40
50
60 ns 1,2,3
11
12
14
15 ns 1,5,10
18
20
25
30 ns 1,5,6
0
0
0
0
ns
3 8 3 8 3 8 3 10 ns
12
12
14
13
ns
8
8
9
10
ns
30
34
45
40
ns
6 10k 6 10k 8 10k 12 10k ns
17 24 18 28 19 37 18 45 ns
12 17 13 20 14 25 13 30 ns 7
5
5
5
5
ns
0
0
0
0
ns
7
8
9
10
ns
0
0
0
0
ns
6
6
7
10
ns
18
20
25
30
ns
30
34
44
55
ns
0
0
0
0
ns
0
0
0
0
ns 4
0
0
0
0
ns 4
0
0
0
0
ns 8,9
6
6
6
10
ns
6
6
6
10
ns
11
12
13
13
ns
11
12
13
13
ns
G-Link Technology Corporation
2701Northwestern Parkway
Santa Clara, CA 95051, U.S.A.
-5-
G-Link Technology Corporation,Taiwan
6F, No. 24-2, Industry E. RD. IV, Science Based
Industrial Park, Hsin Chu, Taiwan.
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