GLT4160L16-35TC Ver la hoja de datos (PDF) - G-Link Technology
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GLT4160L16-35TC Datasheet PDF : 16 Pages
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G-LINK
GLT4160L16
1M X 16 CMOS DYNAMIC RAM WITH EXTENDED DATA OUTPUT
Mar 2000 (Rev.2.0)
Absolute Maximum Ratings*
Capacitance*
TA=25°C, VCC=3.3V±0.3V, VSS=0V
Operating Temperature, TA (ambient)
Symbol
Parameter
.....................................…0°C to +70°C
Storage Temperature(plastic)....-55°C to +150°C CIN1 Address Input
Voltage Relative to VSS...............-1.0V to + 4.6V
Short Circuit Output Current......................50mA
Power Dissipation......................................1.0W
CIN2
COUT
RAS , LCAS , UCAS , WE , OE
Data Input/Output
Max. Unit
5 pF
7 pF
7 pF
*Note:Operation above Absolute Maximum Ratings can *Note: Capacitance is sampled and not 100% tested
abversely affect device reliability.
Electrical Specifications
l CAS means UCAS and LCAS .
l All voltages are referenced to GND.
l After power up, wait more than 100µs and then, execute eight CAS -before-RAS or RAS -only
refresh cycles as dummy cycles to initialize internal circuit.
Block Diagram :
RAS
LCAS
UCAS
WE
Clock
Generator
Upper
Byte
Control
Lower
Byte
Control
OE
Data
X8
Output X8
Buffer
DQ0
|
DQ7
Vcc
GND
CAS before
RAS Counter
Memory
Array
1024X1024X16
Data
X8
Input
X8
Buffer
Row
Address
A0
Buffer
X0..X9
|
A9
Column
Address
Buffer
Y0..Y9
...1024X16...
Sense Amplifier
X1
6
Data
X8
Output X8
Buffer
....1024....
Column Decoder
Data
X8
Input
X8
Buffer
DQ8
|
DQ15
G-Link Technology Corporation
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Santa Clara, CA 95051, U.S.A.
-3-
G-Link Technology Corporation,Taiwan
6F, No. 24-2, Industry E. RD. IV, Science Based
Industrial Park, Hsin Chu, Taiwan.
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