HV301LG Ver la hoja de datos (PDF) - Supertex Inc

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componentes Descripción

Fabricante

HV301LG

35-65V hotswap, controller with circuit breaker

Supertex Inc 

HV301/HV311

Electrical Characteristics (-10V ≤ VEE ≤ -90V, -40°C ≤ +85°C unless otherwise noted)

Symbol

Parameter

Min Typ Max Units

Conditions

Supply (Referenced to VDD pin)

VEE

Supply Voltage

IEE

Supply Current

IEE

Sleep Mode Suppy Current

OV and UV Control (Referenced to VEE pin)

-90

-10

V

600

700

µA VEE = -48V, Mode = Limiting

400

450

µA VEE = -48V, Mode = Sleep

VUVH

VUVL

VUVHY

IUV

VOVH

VOVL

VOVHY

IOV

UV High Threshold

UV Low Threshold

UV Hysteresis

UV Input Current

OV High Threshold

OV Low Threshold

OV Hysteresis

OV Input Current

Current Limit (Referenced to VEE pin)

VSENSE-CL Current Limit Threshold Voltage

VSENSE-CB Circuit Breaker Threshold Voltage

Gate Drive Output (Referenced to VEE pin)

VGATE

IGATEUP

Maximum Gate Drive Voltage

Gate Drive Pull-Up Current

IGATEDOWN Gate Drive Pull-Down Current

1.26

V Low to High Transition

1.16

V High to Low Transition

100

mV

1.0

1.26

nA VUV = VEE +1.9V

V Low to High Transition

1.16

V High to Low Transition

100

mV

1.0

nA VOV = VEE + 0.5V

40

50

60

mV VUV = VEE + 1.9V, VOV = VEE + 0.5V

80

100

120

mV VUV = VEE + 1.9V, VOV = VEE + 0.5V

8.5

10

500

40

12

V VUV = VEE + 1.9V, VOV = VEE + 0.5V

µA VUV = VEE + 1.9V, VOV = VEE + 0.5V

mA VUV = VEE, VOV = VEE + 0.5V

Ramp Timing Control (Test Conditions: CLOAD=100µF, CRAMP=10nF, VUV=VEE+1.9V, VOV=VEE+0.5V, External MOSFET is IRF530*)

IRAMP

Ramp Pin Output Current

10

tPOR

Time from UV to Gate Turn On

2.0

tRISE

Time from Gate Turn On to VSENSE Limit

400

tLIMIT

Duration of Current Limit Mode

5.0

tPWRGD Time from Current Limit to PWRGD

5.0

VRAMP

Voltage on Ramp Pin in Current Limit Mode

3.6

tSTARTLIMIT Start Up Time Limit

80

100 120

tCBTRIP Circuit Breaker Delay Time

2.0

5.0

tAUTO

Automatic Restart Delay TIme

16

Power Good Output (Referenced to VEE pin)

VPWRGD(hi)

VPWRGD(lo)

IPWRGD(lk)

Applied Voltage to PWRGD

PWRGD Low Voltage

Maximum Leakage Current

90

0.5

0.8

<1.0 10

Dynamic Characteristics

µA VSENSE = 0V

ms (See Note 1)

µs

ms

ms

V (See Note 2)

ms

µs May be extended by external RC circuit

s

V PWRGD=Inactive

V IPWRGD = 1mA, PWRGD=Active

µA PWRGD=Inactive, VPWRGD=90

tGATEHLOV OV Comparator Transition

tGATEHLUV UV Comparator Transition

500

ns

500

ns

Note 1: This timing depends on the threshold voltage of the external N-Channel MOSFET. The higher its threshold is, the longer this timing.

Note 2: This voltage depends on the characteristics of the external N-Channel MOSFET. Vth = 3V for an IRF530.

* IRF530 is a registered trademark of International Rectifier.

2

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